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| SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw CSFB201 Thru CSFB205 Reverse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2.13) 0.012(0.31) 0.006(0.15) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CSFB 201 50 50 35 CSFB 202 100 100 70 CSFB 203 200 200 140 CSFB 204 400 400 280 CSFB 205 600 600 420 Unit V V V A 50 Io VF Trr IR R 0.95 35 2.0 1.3 1.5 50 A V nS uA 5.0 100 20 -55 to +150 -55 to +150 JL C/W C C Tj TSTG Note 1: Thermal resistance from junction to lead, 8.0x8.0 mm square (0.13 mm thick) land areas. MDS0210019B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CSFB201 Thru CSFB205) Fig. 1 - Reverse Characteristics 1000 100 Fig.2 - Forward Characteristics CSFB201-203 Forward current ( A ) Tj=125 C 10 CSFB204 100 10 Tj=75 C 1.0 CSFB205 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 1.0 Tj=25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) Fig. 3 - Junction Capacitance 50 Fig. 4 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) 60 8.3mS Single Half Sine Wave JEDEC methode f=1.0MHz Vsig=50mVp-p Junction Capacitance (pF) 40 50 40 30 Tj=25 C 20 15 0 30 20 Tj=25 C 10 0 0.1 1.0 10 100 1000 1 5 10 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.8 Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210019B Page 2 |
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